# US 11,488,920 B2 · Silver nano-twinned thin film structure and method for forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,488,920 B2 - Document ID: US11488920B2 - Status: Granted - Kind: B2 - Application number: 16/844,972 - Filed: 2020-04-09 - Published: 2021-07-22 - Granted: 2022-11-01 - Earliest claimed: 2020-01-21 - Assignees: Materials Technology Corporation - Applicants: AG Materials Technology Co., Ltd. - Inventors: Hsing-Hua Tsai; An-Chi Chuang; Po-Ching Wu; Chung-Hsin Chou - Web page: https://patentgrep.com/patent/US11488920B2 ## CPC - H10W 72/30: Die-attach connectors - H10W 72/90: Bond pads, in general - H10W 72/013: {of die-attach connectors} - H10W 72/01338: {in gaseous form, e.g. by CVD or PVD} - H10W 72/01938: {in gaseous form, e.g. by CVD or PVD} - H10W 72/0198: {batch processes} - H10W 72/07236: {Soldering or alloying} - H10W 72/07336: {Soldering or alloying} - H10W 72/252: {comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu} - H10W 72/29: Bond pads specially adapted therefor - H10W 72/322: {Multilayered die-attach connectors, e.g. a coating on a top surface of a core} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/59: Bond pads specially adapted therefor - H10W 72/921: {Structures or relative sizes of bond pads} - H10W 72/923: {Bond pads having multiple stacked layers} - H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include Σ3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries include 95% or more crystal orientation. ## Claims ### Claim 1 A silver nano-twinned thin film structure, comprising: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries comprise Σ3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries comprise 95% or more [111] crystal orientation. ### Claim 2 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein the silver nano-twinned thin film includes silver nano-twinned pillars with a diameter of 0.01 μm to 10 μm. ### Claim 3 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein a thickness of the silver nano-twinned thin film is between 0.1 μm and 100 μm. ### Claim 4 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein a thickness of the adhesive-lattice-buffer layer is between 0.01 μm and 1 μm. ### Claim 5 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein a distance between parallel-arranged twin boundaries is between 1 nm and 100 nm. ### Claim 6 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, further comprising a diffusion-barrier-reaction layer between the adhesion-lattice-buffer layer and the silver nano-twinned thin film. ### Claim 7 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein the adhesive-lattice-buffer layer comprises Ti, Al, or a combination thereof. ### Claim 8 (depends on 6) The silver nano-twinned thin film structure as claimed in claim 6, wherein the diffusion-barrier-reaction layer comprises Ni, Cu, or a combination thereof. ### Claim 9 (depends on 1) The silver nano-twinned thin film structure as claimed in claim 1, wherein the substrate comprises a single-crystalline silicon substrate, polycrystalline silicon substrate, SiC substrate, GaAs substrate, or glass substrate. ### Claim 10 (depends on 9) The silver nano-twinned thin film structure as claimed in claim 9, wherein the single-crystalline silicon substrate comprises (100), (110), or (111) crystal orientation. ### Claim 11 (depends on 1) A method for forming the silver nano-twinned thin film structure as set forth in claim 1, comprising: forming the adhesive-lattice-buffer layer on the substrate; and forming the silver nano-twinned thin film on the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries comprise Σ3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries comprise 95% or more [111] crystal orientation. ### Claim 12 (depends on 11) The method as claimed in claim 11, wherein the adhesive-lattice-buffer layer and the silver nano-twinned thin film are formed by sputtering or evaporation coating. ### Claim 13 (depends on 11) The method as claimed in claim 11, further comprising forming a diffusion-barrier-reaction layer between the adhesive-lattice-buffer layer and the silver nano-twinned thin film by sputtering or evaporation coating. ### Claim 14 (depends on 11) The method as claimed in claim 11, wherein the substrate comprises a single-crystalline silicon substrate, polycrystalline silicon substrate, SiC substrate, GaAs substrate, or glass substrate. ### Claim 15 (depends on 14) The method as claimed in claim 14, wherein the single-crystalline silicon substrate comprises (100), (110), or (111) crystal orientation.