Back to results
US 11,482,985 B2Granted
BAW resonator, RF filter, multiplexer and method of manufacturing a BAW resonator
AssigneeRf360 Europe GmbH
InventorsFranz Sebastian Fries, Christian Huck, Maximilian Schiek, Willi Aigner
Life of this patent
Estimating the term…
Abstract
A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.
Claims26
A bulk acoustic wave (BAW) resonator comprising
- a bottom electrode layer with a bottom electrode;
- a top electrode layer with a top electrode above the bottom electrode layer;
- and
- a piezoelectric layer with a first piezoelectric material and a second piezoelectric material, wherein:
- the first piezoelectric material and the second piezoelectric material have different piezoelectric polarities,
- a first segment of the first piezoelectric material is arranged between a first segment of the second piezoelectric material and a second segment of the second piezoelectric material,
- the first segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a second segment of the first piezoelectric material or a third segment of the second piezoelectric material,
- the second segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a third segment of the first piezoelectric material or a fourth segment of the second piezoelectric material, and a top portion of the second segment of the first piezoelectric material or of the third segment of the second piezoelectric material and a top portion of the fourth segment of the second piezoelectric material are below a top portion of the first segment of the first piezoelectric material.
5 more elements
A method of manufacturing a bulk acoustic wave (BAW) resonator, comprising:
- providing a bottom electrode layer;
- structuring a bottom electrode in the bottom electrode layer;
- depositing a first piezoelectric material and a second piezoelectric material in a piezoelectric layer on or above the bottom electrode layer, wherein:
- the first piezoelectric material and the second piezoelectric material have different piezoelectric polarities,
- a first segment of the first piezoelectric material is arranged between a first segment of the second piezoelectric material and a second segment of the second piezoelectric material,
- the first segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a second segment of the first piezoelectric material or a third segment of the second piezoelectric material,
- the second segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a third segment of the first piezoelectric material or a fourth segment of the second piezoelectric material, and
- a top portion of the second segment of the first piezoelectric material or of the third segment of the second piezoelectric material and a top portion of the fourth segment of the second piezoelectric material are below a top portion of the first segment of the first piezoelectric material;
- and
- depositing a top electrode layer on or above the piezoelectric layer.
7 more elements
A bulk acoustic wave (BAW) resonator, comprising:
- a bottom electrode layer with a bottom electrode;
- a top electrode layer with a top electrode above the bottom electrode layer;
- and
- a piezoelectric layer with a first piezoelectric material and a second piezoelectric material, wherein:
- the first piezoelectric material and the second piezoelectric material have different piezoelectric polarities,
- a first segment of the first piezoelectric material is arranged between a first segment of the second piezoelectric material and a second segment of the second piezoelectric material,
- the first segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a second segment of the first piezoelectric material or a third segment of the second piezoelectric material,
- the second segment of the second piezoelectric material is arranged between the first segment of the first piezoelectric material and a third segment of the first piezoelectric material or a fourth segment of the second piezoelectric material, and
- a top portion of the first segment of the second piezoelectric material and a top portion of the second segment of the second piezoelectric material are below a top portion of the first segment of the first piezoelectric material.
6 more elements
Dependencies are inferred from the claim text.