Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion

A power semiconductor device, comprising:

• a semiconductor element;
• a terminal bonded to an upper surface of the semiconductor element;
• a chassis housing the semiconductor element and the terminal;
• a sealing resin sealing the semiconductor element and the terminal in the chassis, the sealing resin including a first sealing resin covering at least the semiconductor element and a second sealing resin formed on an upper portion of the first sealing resin;
• and
• a polyimide layer between the first sealing resin and the second sealing resin,
• in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal, and
• the second sealing resin is positioned entirely to a side of the terminal opposite a side of the semiconductor element.