Back to results
US 11,482,412 B2Granted
Method for depositing a gap-fill layer by plasma-assisted deposition
AssigneeASM IP Holding B.V.
InventorTimothee Julien Vincent Blanquart
Life of this patent
Estimating the term…
Abstract
A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.
Claims19
A method of filling a patterned recess on a surface of a substrate, the method comprising the steps of:
- providing a substrate comprising a recess in a reaction space;
- providing an alkylsilane precursor to the reaction space, thereby filling the recesses with a gas phase precursor;
- and
- providing a plasma containing at least one of argon and helium to the reaction space, thereby forming a viscous material in the recess,
- wherein no other nitrogen-containing, oxygen-containing, or hydrogen containing reactant gases are provided to the reaction space,
- wherein the viscous material flows in the recess and accumulates at a bottom of the recess to thereby form deposited material at the bottom of the recess.
3 more elements
Dependencies are inferred from the claim text.