Electrically and magnetically enhanced ionized physical vapor deposition unbalanced sputtering source

An electrically and magnetically enhanced ionized physical deposition (I-PVD) unbalanced magnetron sputtering apparatus that deposits a layer on a substrate, the apparatus comprising:

• a first cathode target assembly configured to be disposed inside a vacuum chamber, the first cathode target assembly comprising the unbalanced magnetron;
• a second cathode assembly configured to be positioned concentrically with respect to the first cathode target assembly inside the vacuum chamber, the second cathode assembly comprising an anode, a gap electrode, a first magnet, and a second magnet, the anode positioned such that a gap is formed between the anode and the gap electrode, the first magnet and the second magnet each comprising a ring shape, the first magnet comprising a first pole surface having only a single polarity, the second magnet comprising a second pole surface having only a single polarity, the first pole surface being substantially parallel to the second pole surface, the single polarity of the first pole surface being the same as the single polarity of the second pole surface, the first pole surface facing the second pole surface, the first pole surface disposed adjacent to the second pole surface, thereby causing a cusp magnetic field in the gap;
• a radio frequency power supply coupled to the second cathode assembly;
• a pulsed power supply coupled to the first cathode target assembly;
• and
• an inductor coupled between the second cathode assembly and ground, wherein the inductor is coupled to a connector, the connector separated from a cylindrical shield by a first isolator, the cylindrical shield disposed around the anode and the gap electrode, the cylindrical shield separated from the anode by a second isolator, the cylindrical shield separated from the gap electrode by a third isolator.