Composition having suppressed alumina damage and production method for semiconductor substrate using same
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsToshiyuki Oie, Akinobu Horita, Kenji Yamada, Takahiro Kikunaga
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Abstract
The present invention pertains to: a composition capable of removing dry etching residue present on the surface of a semiconductor integrated circuit, while suppressing alumina damage in a production process for the semiconductor integrated circuit; a cleaning method for semiconductor substrates that use alumina; and a production method for a semiconductor substrate having an alumina layer. This composition is characterized by containing 0.00005%-1% by mass of a barium compound (A) and 0.01%-20% by mass of a fluorine compound (B) and having a pH of 2.5-8.0.
Claims18
A method for producing a semiconductor substrate having an alumina layer, the method comprising:
- removing a dry etching residue using a composition, comprising:
- from 0.00005 to 1% by mass of a barium compound (A) and from 0.01 to 20% by mass of a fluorine compound (B), and which has a pH of 2.5 to 8.0, wherein a content of hydrogen peroxide in the composition is less than 0.002% by mass.
A method for washing a semiconductor substrate having an alumina layer, the method comprising:
- removing a dry etching residue using a composition comprising:
- from 0.00005 to 1% by mass of a barium compound (A) and from 0.01 to 20% by mass of a fluorine compound (B), and which has a pH of 2.5 to 8.0, wherein a content of hydrogen peroxide in the composition is less than 0.002% by mass.
Dependencies are inferred from the claim text.