Platforms enabled by buried tunnel junction for integrated photonic and electronic systems

A device comprising:

• a metal (III)-polar III-nitride substrate having a first surface opposite a second surface;
• a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface;
• a p-type III-nitride layer formed directly on the tunnel junction;
• a number of material layers;
• a first material layer formed on the p-type III-nitride layer;
• each subsequent layer disposed on a preceding layer;
• wherein one layer from the number of material layers is patterned into a structure;
• said one layer being a III-nitride layer;
• wherein the device is an LED;
• wherein the first material layer is an active layer including at least one quantum well, wherein a second, and last, material layer is an n-type III-nitride layer formed directly on the active layer;
• a portion of the second material layer, extending from above the active layer, being patterned into nanopillars;
• wherein the metal (III)-polar III-nitride substrate is a metal (III)-polar n-type III-nitride substrate;
• wherein a first ohmic contact is disposed on the second surface of the metal (III)-polar III-nitride substrate;
• wherein at least one second ohmic contact is disposed on one or more surfaces of the n-type III-nitride layer from which the nanopillars emerge;
• and
• wherein material that can be optically pumped is disposed to receive emission from the nanopillars, or wherein one of a quantum dot or a metal layer is formed at an end of each one of the nanopillars furthest from the active layer.