# US 11,476,195 B2 · Wiring structure and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,476,195 B2 - Document ID: US11476195B2 - Status: Granted - Kind: B2 - Application number: 16/429,622 - Filed: 2019-06-03 - Published: 2019-12-05 - Granted: 2022-10-18 - Earliest claimed: 2018-06-04 - Assignees: Material Concept, Inc. - Applicants: Material Concept, Inc. - Inventors: Junichi Koike - Web page: https://patentgrep.com/patent/US11476195B2 ## CPC - H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)} - H10W 20/4407: {Aluminium alloys} - H10W 20/031: {of conductive parts of the interconnections} - H10W 20/4424: {Copper alloys} - H10W 20/4437: {the principal metal being a transition metal} - H10W 20/48: Insulating materials thereof - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract To provide a wiring material which does not require a diffusion barrier layer and exhibits excellent conductivity and adhesion property between a conductor and an insulator and a semiconductor element using the same. The wiring structure of the present invention includes a conductor containing an intermetallic compound and an insulator layer. The intermetallic compound preferably contains two or more kinds of metal elements selected from the group consisting of Al, Fe, Co, Ni, and Zn. In addition, the intermetallic compound is preferably one or more kinds selected from an intermetallic compound containing Al and Co, an intermetallic compound containing Al and Fe, an intermetallic compound containing Al and Ni, an intermetallic compound containing Co and Fe, or an intermetallic compound containing Ni and Zn. ## Claims ### Claim 1 A wiring structure of a semiconductor element, the wiring structure comprising a conductor containing a thin film of an intermetallic compound and an insulator layer, wherein the intermetallic compound contains a first metal element and a second metal element with an atomic ratio of the first metal element:second metal element in a range from 48.5:51.5 to 51.5:48.5 or from 30:70 to 37:63 so that the wiring structure exhibits excellent conductivity and good adhesion property between the intermetallic compound and the insulator layer which directly and physically contact each other without a diffusion barrier layer interposed therebetween, wherein the first metal element is one or more kinds selected from the group consisting of Fe, Co, Ni, Cu, and Zn, and the second metal element is one or more kinds selected from the group consisting of Al and Sb, and wherein a metal oxide layer formed by bonding at least the second metal element with oxygen is interposed between the conductor and the insulator layer. ### Claim 2 (depends on 1) The wiring structure according to claim 1, wherein the intermetallic compound contains two or more kinds of metal elements selected from the group consisting of Al, Fe, Co, Ni, and Zn. ### Claim 3 (depends on 1) The wiring structure according to claim 1, wherein the intermetallic compound is one or more kinds selected from an intermetallic compound containing Co and Al, an intermetallic compound containing Fe and Al, an intermetallic compound containing Ni and Al, an intermetallic compound containing Fe and Co, or an intermetallic compound containing Ni and Zn. ### Claim 4 (depends on 1) The wiring structure according to claim 1, wherein the insulator layer contains an inorganic oxide, an absolute value of standard free energy of oxidation of the first metal element is smaller than an absolute value of standard free energy of oxidation of the insulator layer, and an absolute value of standard free energy of oxidation of the second metal element is larger than the absolute value of standard free energy of oxidation of the insulator layer. ### Claim 5 (depends on 1) The wiring structure according to claim 1, wherein the wiring structure is comprised in a semiconductor device which includes a semiconductor element and a circuit, and the wiring structure is used for connecting the semiconductor element and the circuit to each other in the semiconductor device. ### Claim 6 (depends on 1) The wiring structure according to claim 1, wherein the wiring structure comprises a silicon wafer substrate, a film of the insulator on the silicon wafer substrate, and the conductor on the film of the insulator. ### Claim 7 (depends on 1) The wiring structure according to claim 1, wherein the thin film of the intermetallic compound has columnar crystals in which crystal grains are extended in the film thickness direction. ### Claim 8 (depends on 1) The wiring structure according to claim 1, wherein the intermetallic compound is at least one selected from the group consisting of AlNi, CuAl, NiSb, AlFe, AlCo, CoFe, CuAl2, NiZn, and NiSb. ### Claim 9 (depends on 1) A method of manufacturing the wiring structure according to claim 1, comprising: heating a substrate having the insulator layer containing an oxide to 100° C. or more and 500° C. or less and vapor-depositing the first and second metal elements on the substrate to form the conductor containing the intermetallic compound. ### Claim 10 A semiconductor device comprising a semiconductor element, a wiring structure, and a circuit, wherein the wiring structure includes a conductor containing a thin film of an intermetallic compound and an insulator layer and connects the semiconductor element and the circuit to each other, wherein the intermetallic compound contains a first metal element and a second metal element with an atomic ratio of the first metal element:second metal element in a range from 48.5:51.5 to 51.5:48.5 or from 30:70 to 37:63 so that the wiring structure exhibits excellent conductivity and good adhesion property between the intermetallic compound and the insulator layer which directly and physically contact each other without a diffusion barrier layer interposed therebetween, wherein the first metal element is one or more kinds selected from the group consisting of Fe, Co, Ni, Cu, and Zn, and the second metal element is one or more kinds selected from the group consisting of Al and Sb, and wherein a metal oxide layer formed by bonding at least the second metal element with oxygen is interposed between the conductor and the insulator layer. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, wherein the insulator layer contains an inorganic oxide, an absolute value of standard free energy of oxidation of the first metal element is smaller than an absolute value of standard free energy of oxidation of the insulator layer, and an absolute value of standard free energy of oxidation of the second metal element is larger than the absolute value of standard free energy of oxidation of the insulator layer.