Microwave amplifiers tolerant to electrical overstress

A method of electrical overstress protection in a monolithic microwave integrated circuit (MMIC), the method comprising:

• receiving a radio frequency (RF) signal at a signal pad;
• receiving the RF signal at a primary section of a balun and outputting a differential RF signal from a secondary section of the balun;
• amplifying the differential RF signal using an amplifier;
• and
• protecting the amplifier from electrical overstress using a first protection inductor connected between the primary section of the balun and a ground pad.

A semiconductor die comprising:

• a plurality of pads including a signal pad configured to receive a radio frequency (RF) signal, and a ground pad;
• a balun including a primary section configured to receive the RF signal and a secondary section configured to output a differential RF signal;
• a pair of field-effect transistors (FETs) configured to receive the differential RF signal, the pair of FETs including a first FET and a second FET;
• a plurality of input inductors including a first input inductor electrically connected between a first end of the secondary section of the balun and a gate of the first FET, and a second input inductor electrically connected between a second end of the secondary section of the balun and a gate of the second FET;
• and
• a first protection inductor electrically connected between the primary section and the ground pad and operable to protect the pair of FETs from electrical overstress.