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US 11,469,136 B2Granted
Semiconductor structure with partially embedded insulation region and related method
AssigneeSTMicroelectronics S.r.l.
InventorsSimone Dario Mariani, Fabrizio Fausto Renzo Toia, Marco Sambi, Davide Giuseppe Patti, Marco Morelli, Giuseppe Barillaro
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Abstract
A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.
Claims20
A method, comprising:
- forming a first P doped region within a substrate;
- forming a first N doped region at least partially in the first P doped region;
- forming porous silicon in the first P doped region by anodizing the first P doped region;
- forming a first silicon oxide region by oxidizing the porous silicon in the P doped region;
- and
- forming a second P doped region within the first N doped region.
3 more elements
A method, comprising:
- forming, by doping, a first P doped silicon region within a first N type silicon region of a substrate;
- forming, by counter-doping, a second N type silicon region over the first P doped silicon region, the second N type silicon region at least partially within the first P doped silicon region, the first P doped silicon region adjacent to a first surface of the second N type silicon region and at least partially surrounding a sidewall of the second N type silicon region;
- forming porous silicon in the first P doped silicon region by anodizing the first P doped silicon region;
- and
- forming a first silicon oxide region by oxidizing the porous silicon in the first P doped silicon region.
2 more elements
A method, comprising:
- forming a mask layer over an epitaxial N type semiconductor layer of a substrate;
- forming a first aperture through the mask layer by patterning the mask layer;
- forming a first P doped region by doping a P type impurity through the first aperture to a first depth;
- forming a second aperture through the mask layer by patterning the mask layer;
- forming a second P doped region and an extended first P doped region by doping the P type impurity through the first aperture and the second aperture together, the second P doped region including a second depth and the extended first P doped region including a third depth;
- forming porous silicon in the extended first P doped region and the second P doped region by anodizing;
- and
- forming a first silicon oxide region and a second silicon oxide region by oxidizing the porous silicon in the extended first P doped region and the second P doped region.
5 more elements
Dependencies are inferred from the claim text.