Semiconductor device

A semiconductor device comprising:

• a laminate substrate;
• a semiconductor element mounted on the laminate substrate;
• an electrically conductive connection member;
• a sealing material with which the semiconductor element and the electrically conductive connection member are sealed;
• and
• a primer layer on an interface between the sealing material and sealed members including the laminate substrate, the semiconductor element, and the electrically conductive connection member,
• wherein the sealing material includes:
• a first sealing layer which is provided in contact with the primer layer;
• and a second sealing layer which covers the first sealing layer,
• wherein the semiconductor device satisfies
• αp≥α1>α2,
• wherein αp represents a coefficient of linear thermal expansion of the primer layer, α1 represents a coefficient of linear thermal expansion of the first sealing layer, and α2 represents a coefficient of linear thermal expansion of the second sealing layer,
• αc≥15×10−6/° C.,
• wherein αc represents a composite coefficient of linear thermal expansion of the first sealing layer and the second sealing layer,
• Ec≥5 GPa or more,
• wherein Ec represents a composite Young's modulus of the first sealing layer and the second sealing layer, and
• αc and Ec are defined by the following formulae:
• αc=(α1E1V1+α2E2(1−V1))/(E1V1+E2(1−V1)), and
• Ec=E1V1+E2(1−V1),
• wherein E1 represents a Young's modulus of the first sealing layer, E2 represents a Young's modulus of the second sealing layer, and V1 represents a volume fraction of the first sealing layer in a total volume of a sealing material portion stacked on a predetermined interface region including the primer layer (0<V1<1).