Magnetoresistance effect element and magnetic memory
AssigneeTohoku University
InventorsKoichi Nishioka, Tetsuo Endoh, Shoji Ikeda, Hiroaki Honjo, Hideo Sato, Hideo Ohno
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Abstract
Provided is a magnetoresistance effect element in which the magnetization direction of the recording layer is perpendicular to the film surface and which has a high thermal stability factor Δ, and a magnetic memory. A recording layer having a configuration of first magnetic layer/first non-magnetic coupling layer/first magnetic insertion layer/second non-magnetic coupling layer/second magnetic layer is sandwiched between the first and second non-magnetic layers and stacked so that a magnetic coupling force is generated between the first magnetic layer and the second magnetic layer.
Claims21
A magnetoresistance effect element comprising:
- a first non-magnetic layer;
- a first magnetic layer provided adjacent to the first non-magnetic layer and having a magnetization direction which is perpendicular to a film surface;
- a first non-magnetic coupling layer provided adjacent to the first magnetic layer on a side of the first magnetic layer opposite to the first non-magnetic layer;
- a first magnetic insertion layer provided adjacent to the first non-magnetic coupling layer on a side of the first non-magnetic coupling layer opposite to the first magnetic layer;
- a second non-magnetic coupling layer provided adjacent to the first magnetic insertion layer on a side of the first magnetic insertion layer opposite to the first non-magnetic coupling layer;
- a second magnetic layer provided adjacent to the second non-magnetic coupling layer on a side of the second non-magnetic coupling layer opposite to the first magnetic insertion layer and having a magnetization direction which is perpendicular to the film surface;
- and
- a second non-magnetic layer provided adjacent to the second magnetic layer on a side of the second magnetic layer opposite to the second non-magnetic coupling layer, wherein
- the first non-magnetic layer and the second non-magnetic layer are constituted of a layer including O (oxygen);
- the first magnetic layer and the second magnetic layer include at least either Co or Fe;
- the first non-magnetic coupling layer and the second non-magnetic coupling layer include a non-magnetic element consisting of at least one of W, Ta, Hf, Zr, Nb, Mo, V, B;
- the first non-magnetic coupling layer and the second non-magnetic coupling layer has a film thickness of 0.2 nm or more and 1.3 nm or less;
- the first magnetic insertion layer includes at least Fe and B;
- the first magnetic insertion layer has a film thickness of 0.4 nm or more and 1.0 nm or less;
- the first magnetic layer and the second magnetic layer are magnetically coupled by a first coupling layer constituted of the first non-magnetic coupling layer, the first magnetic insertion layer and the second non-magnetic coupling layer;
- and
- the first magnetic layer, the first coupling layer, and the second magnetic layer constitute a first recording layer.
A magnetoresistance effect element comprising:
- a first non-magnetic layer;
- a first magnetic layer provided adjacent to the first non-magnetic layer and having a magnetization direction which is perpendicular to a film surface;
- a first non-magnetic coupling layer provided adjacent to the first magnetic layer on a side of the first magnetic layer opposite to the first non-magnetic layer;
- a first magnetic insertion layer provided adjacent to the first non-magnetic coupling layer on a side of the first non-magnetic coupling layer opposite to the first magnetic layer;
- a second non-magnetic coupling layer provided adjacent to the first magnetic insertion layer on a side of the first magnetic insertion layer opposite to the first non-magnetic coupling layer;
- a second magnetic layer provided adjacent to the second non-magnetic coupling layer on a side of the second non-magnetic coupling layer opposite to the first magnetic insertion layer and having a magnetization direction which is perpendicular to the film surface;
- a third non-magnetic layer provided adjacent to the second magnetic layer on a side of the second magnetic layer opposite to the second non-magnetic coupling layer;
- a third magnetic layer provided adjacent to the third non-magnetic layer on a side of the third non-magnetic layer opposite to the second magnetic layer and having a magnetization direction which is perpendicular to the film surface;
- a fifth non-magnetic coupling layer provided adjacent to the third magnetic layer on a side of the third magnetic layer opposite to the third non-magnetic layer;
- a fourth magnetic insertion layer provided adjacent to the fifth non-magnetic coupling layer on a side of the fifth non-magnetic coupling layer opposite to the third magnetic layer;
- a sixth non-magnetic coupling layer provided adjacent to the fourth magnetic insertion layer on a side of the fourth magnetic insertion layer opposite to the fifth non-magnetic coupling layer;
- a fourth magnetic layer provided adjacent to the sixth non-magnetic coupling layer on a side of the sixth non-magnetic coupling layer opposite to the fourth magnetic insertion layer and having a magnetization direction which is perpendicular to the film surface;
- and
- a second non-magnetic layer provided adjacent to the fourth magnetic layer on a side of the fourth magnetic layer opposite to the sixth non-magnetic coupling layer, wherein
- the first non-magnetic layer and the second non-magnetic layer are constituted of a layer including O (oxygen);
- the first magnetic layer, the second magnetic layer, the third magnetic layer, and the fourth magnetic layer include at least either Co or Fe;
- the first non-magnetic coupling layer, the second non-magnetic coupling layer, the fifth non-magnetic coupling layer, and the sixth non-magnetic coupling layer include a non-magnetic element consisting of at least one of W, Ta, Hf, Zr, Nb, Mo, V, B;
- the first non-magnetic coupling layer and the second non-magnetic coupling layer has a film thickness of 0.2 nm or more and 1.3 nm or less;
- the first magnetic insertion layer and the fourth magnetic insertion layer include at least Fe and B;
- the first magnetic insertion layer has a film thickness of 0.4 nm or more and 1.0 nm or less;
- the third non-magnetic layer includes an oxide of a non-magnetic element;
- the first magnetic layer and the second magnetic layer are magnetically coupled by a first coupling layer constituted of the first non-magnetic coupling layer, the first magnetic insertion layer and the second non-magnetic coupling layer;
- the second magnetic layer and the third magnetic layer are magnetically coupled by a second coupling layer constituted of the third non-magnetic layer;
- the third magnetic layer and the fourth magnetic layer are magnetically coupled by a third coupling layer constituted of the fifth non-magnetic coupling layer, the fourth magnetic insertion layer and the sixth non-magnetic coupling layer;
- the first magnetic layer and the fourth magnetic layer are magnetically coupled by the first coupling layer, the second coupling layer, and the third coupling layer;
- the first magnetic layer, the first coupling layer, the second magnetic layer, the second coupling layer, the third magnetic layer, the third coupling layer, and the fourth magnetic layer constitute a first recording layer.
Dependencies are inferred from the claim text.