Resist composition and patterning process

A resist composition comprising a base polymer and a quencher, the quencher containing at least one compound selected from amine compounds having the formula (A-1) and amine compounds having the formula (A-2):

• wherein X is a single bond or a C1-C20 divalent linking group which may contain an ether bond, carbonyl moiety, ester bond, amide bond, sultone ring, lactam ring, carbonate bond, halogen, hydroxyl moiety or carboxyl moiety,
• R1 is hydrogen, hydroxyl, an optionally halo-substituted C1-C6 alkyl group, optionally halo-substituted C1-C6 alkoxy group, optionally halo-substituted C2-C6 acyloxy group, optionally halo-substituted C1-C4 alkylsulfonyloxy group, fluorine, chlorine, bromine, amino, nitro, cyano, —NR1A—C(═O)—R1B, or —NR1A—C(═O)—O—R1B, R1A is hydrogen or a C1-C6 alkyl group, R1B is a C1-C6 alkyl group or C2-C8 alkenyl group,
• R2 and R3 are each independently a C1-C6 alkyl group, R2 and R3 may bond together to form a ring with the carbon atom to which they are attached,
• R4 and R6 are each independently hydrogen, a C1-C4 straight or branched alkyl group, C2-C12 straight or branched alkoxycarbonyl group, C6-C15 aryloxycarbonyl group, or C6-C14 aralkyloxycarbonyl group,
• R5 is a C1-C6 alkyl group, C2-C6 alkenyl group, C2-C6 alkynyl group, or C6-C12 aryl group,
• R is a C2-C10 alicyclic group to form a ring with the nitrogen atom,
• m is an integer of 1 to 5, n is an integer of 0 to 4, and 1≤m+n≤5, and p is 1 or 2.