Pixel array and image sensor including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsMyunglae Chu, Gwideok Ryan Lee, Taeyon Lee, Jaehoon Jeon
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Abstract
A pixel array and an image sensor are provided. The image sensor includes a substrate, a pixel array of pixels, each pixel including a pixel circuit and a pixel conversion device. The pixel circuit is formed in a pixel area corresponding to the pixel in the substrate. The pixel conversion device is arranged on the substrate to vertically overlap the pixel circuit. The pixel circuit includes a floating diffusion node, a reset switching device, and an amplifier including a load device and a plurality of switching devices, the load device being arranged in the pixel area.
Claims20
An image sensor comprising a plurality of pixels arranged in a matrix form and converting a light signal into an electrical signal, each of the plurality of pixels comprising:
- a photoelectric conversion device configured to convert the light signal into electric charges;
- a floating diffusion node, which is connected to the photoelectric conversion device and stores the electric charges;
- an amplifier configured to inversion-amplify a voltage of the floating diffusion node, output, in a reset period, a first output signal through a first node based on the inversion-amplified voltage, and output, in a signal output period, a second output signal through a second node different from the first node based on the inversion-amplified voltage;
- and
- a reset switching device configured to be turned on in the reset period and provide the first output signal of the amplifier to the floating diffusion node,
- wherein the amplifier comprises a load device configured to provide a first bias current in the reset period.
A pixel array of an image sensor, the pixel array comprising:
- a plurality of pixels, each of the plurality of pixels comprising:
- a microlens;
- a first photoelectric conversion device arranged under the microlens and configured to generate first photoelectric charges from a light signal incident thereon;
- and
- a first pixel circuit arranged in a pixel area vertically overlapping the microlens and vertically under the first photoelectric conversion device, the first pixel circuit being configured to output a first sensing signal based on an amount of the first photoelectric charges,
- wherein the first pixel circuit comprises:
- a floating diffusion node that stores the first photoelectric charges;
- an amplifier comprising a plurality of switching devices, the amplifier being configured to amplify a voltage of the floating diffusion node;
- and
- a resistor device configured to provide a bias current to the amplifier in a reset period.
An image sensor comprising:
- a substrate;
- a pixel array comprising a plurality of pixels, each pixel of the plurality of pixels comprising:
- a pixel circuit formed in a pixel area corresponding to the pixel in the substrate;
- and
- a pixel conversion device arranged on the substrate to vertically overlap the pixel circuit,
- wherein the pixel circuit comprises:
- a floating diffusion node;
- a reset switching device;
- and
- an amplifier comprising a load device and a plurality of switching devices,
- the load device being arranged in the pixel area.
Dependencies are inferred from the claim text.