Complementary current field-effect transistor devices and amplifiers
AssigneeCircuit Seed, LLC
InventorsRobert C. Schober, Susan Marya Schober
Life of this patent
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Abstract
The present invention relates to a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. In particular, the present invention relates to a solid state device based on a complementary pair of n-type and p-type current field-effect transistors, each of which has two control ports, namely a low impedance port and gate control port, while a conventional solid state device has one control port, namely gate control port. This novel solid state device provides various improvement over the conventional devices.
Claims5
A method for processing analog signals using a complementary current-injection field effect transistor (CiFET) as a voltage gain structure for converting voltage-in to voltage-out, comprising:
- a. providing the CiFET that comprises a complimentary pair of source-to-drain paths, a common gate port, a common drain port and first and second diffusion ports (iPorts), wherein each of the first and second iPorts separates the corresponding one of the source-to-drain paths into two channels in series, wherein the common gate port is connected to a gate for each of the pair of source-to-drain paths, and each of the gates is capacitively coupled to the two channels of the corresponding one of the pair of source-to-drain paths, and the common drain port is connected to the drains of the pair of source-to-drain paths;
- b. applying an input voltage to the common gate port;
- c. utilizing the voltage at the common drain port as the CiFET output.
A method for processing analog signals using a current-injection field effect transistor (iFET) as a current gain structure for converting current-in to current-out, comprising:
- a. providing the iFET that comprises a source-to-drain path, a gate port, a drain port and a diffusion port (iPort), wherein the iPort separates the source-to-drain path into two channels in series, wherein the gate port is connected to a gate for the source-to-drain path, and the gate is capacitively coupled to the two channels of the source-to-drain path, and the drain port is connected to the drain of the source-to-drain path;
- b. applying an input current to the iPort;
- c. utilizing the current flow at the drain port as the iFET output.
A method for processing analog signals using a current-injection field effect transistor (iFET) as a trans-conductance gain structure for converting voltage-in to current-out, comprising:
- a. providing the iFET that comprises a source-to-drain path, a gate port, a drain port and a diffusion port (iPort), wherein the iPort separates the source-to-drain path into two channels in series, wherein the gate port is connected to a gate for the source-to-drain path, and the gate is capacitively coupled to the two channels of the source-to-drain path, and the drain port is connected to the drain of the source-to-drain path;
- b. applying an input voltage to the gate port;
- c. utilizing the current flow at the drain port as the iFET output.
A method for processing analog signals using a complementary current-injection field effect transistor (CiFET) as a trans-resistance gain structure for converting current-in to voltage-out, comprising:
- a. providing the CiFET that comprises a complimentary pair of source-to-drain paths, a common gate port, a common drain port and first and second diffusion ports (iPorts), wherein each of the first and second iPorts separates the corresponding one of the source-to-drain paths into two channels in series, wherein the common gate port is connected to a gate for each of the pair of source-to-drain paths, and each of the gates is capacitively coupled to the two channels of the corresponding one of the pair of source-to-drain paths, and the common drain port is connected to the drains of the pair of source-to-drain paths;
- b. applying an input current to one or both of the first and second iPorts;
- c. utilizing the voltage at the common drain port as the CiFET output.
Dependencies are inferred from the claim text.