Method for manufacturing optical semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsHitoshi Sakuma, Kazumasa Kishimoto
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Abstract
A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.
Claims5
A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration comprising steps of:
- forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer,
- forming a ridge stripe configuration by etching the semiconductor layer by using gas containing SiCl4,
- removing an oxide layer of a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed, and
- removing the Si based residue whose oxide layer is removed.
Dependencies are inferred from the claim text.