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US 11,456,454 B2Granted
Mixed conductor, electrochemical device including the same, and method of preparing the mixed conductor
AssigneeSamsung Electronics Co., Ltd.
InventorsSangbok Ma, Hyukjae Kwon, Hyunpyo Lee, Donghwa Seo, Dongmin Im
Life of this patent
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Abstract
A mixed conductor represented by Formula 1: A1±xM2±yO4−δ Formula 1 wherein, in Formula 1, A is a monovalent cation, and M is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation, 0≤x≤1, 0≤y≤2, and 0≤δ≤1, with the proviso that when M includes vanadium, 0<δ≤1, and wherein the mixed conductor has an inverse spinel crystal structure.
Claims27
A mixed conductor represented by Formula 1:
- A1±xM2±yO4−δ Formula 1
- wherein, in Formula 1,
- A is a monovalent cation,
- M is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation,
- 0≤x≤1, 0≤y≤2, and
- 0≤δ≤1, with the proviso that when M includes vanadium, 0<δ≤1, and
- wherein the mixed conductor has an inverse spinel crystal structure.
4 more elements
A method of preparing a mixed conductor, the method comprising:
- mixing an A-element containing precursor and an M-element containing precursor to prepare a mixture;
- and
- thermally treating the mixture in a solid phase to prepare the mixed conductor,
- wherein the mixed conductor is represented by Formula 1
- A1±xM2±yO4−δ Formula 1
- wherein, in Formula 1,
- A is a monovalent cation,
- M is at least one of a monovalent cation, a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, or a hexavalent cation,
- 0≤x≤1, 0≤y≤2, and
- 0≤δ≤1, with the proviso that when M includes vanadium, 0<δ≤1, and
- wherein the mixed conductor has an inverse spinel crystal structure.
8 more elements
Dependencies are inferred from the claim text.