System and device including memristor materials in parallel

A method, comprising:

• providing a first conductive plate configured to receive an input signal;
• providing a second conductive plate configured to output an output signal;
• providing a first memristor material positioned between the first conductive plate and the second conductive plate;
• providing a second memristor material positioned between the first conductive plate and the second conductive plate, the first memristor material and the second memristor material being in parallel electrically, the first memristor material being different from the second memristor material;
• providing a barrier material, the barrier material extending from the first conductive plate to the second conductive plate, the barrier material positioned between the first memristor material and the second memristor material such that the first memristor material is not in contact with the second memristor material, wherein the barrier material is a fuse configured to permanently configure the memristor;
• and
• providing a memristor, the memristor comprising the first conductive plate, the second conductive plate, the first memristor material, the second memristor, and the barrier material.