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US 11,456,416 B2Granted
Resistive switching memory cell
AssigneeInternational Business Machines Corporation
InventorsPraneet Adusumilli, Takashi Ando, Reinaldo Vega, Cheng Chi
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Abstract
A resistive random access memory (ReRAM) device is provided. The ReRAM device includes a stack structure including a first electrode, a metal oxide layer in contact with the first electrode, and a second electrode in contact with the metal oxide layer. A portion of the stack structure is modified by ion implantation, and the modified portion of the stack structure is offset from edges of the stack structure.
Claims12
A resistive random access memory (ReRAM) device comprising:
- a stack structure including
- a first electrode,
- a metal oxide layer in contact with the first electrode, and
- a second electrode in contact with the metal oxide layer,
- an interlayer dielectric (ILD) layer formed on the stack structure, the ILD layer having a via formed therein;
- a sidewall spacer formed on the second electrode that fills side portions of the via;
- and
- a second electrode contact structure formed on the second electrode between opposed inner sidewall surfaces of the sidewall spacer,
- wherein a portion of the stack structure is modified by ion implantation, and a modified portion of the stack structure has a width that is less than a width of the second electrode contact structure and less than a width of the stack structure.
6 more elements
A method of fabricating a resistive random access memory (ReRAM) device, the method comprising:
- forming a stack structure by
- forming a first electrode,
- forming a metal oxide layer in contact with the first electrode, and
- forming a second electrode in contact with the metal oxide layer,
- forming an interlayer dielectric (ILD) layer on the stack structure, and forming a via in the ILD layer;
- forming a sidewall spacer on the second electrode that fills side portions of the via;
- and
- forming a second electrode contact structure on the second electrode between opposed inner sidewall surfaces of the sidewall spacer,
- wherein a portion of the stack structure is modified by ion implantation, and a modified portion of the stack structure has a width that is less than a width of the second electrode contact structure and less than a width of the stack structure.
6 more elements
Dependencies are inferred from the claim text.