Variable resistance memory device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJonguk Kim, Young-Min Ko, Byongju Kim, Jaeho Jung, Dongsung Choi
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Abstract
A method of manufacturing a variable resistance memory device may include: forming a memory cell including a variable resistance pattern on a substrate; performing a first process to deposit a first protective layer covering the memory cell; and performing a second process to deposit a second protective layer on the first protective layer. The first process and the second process may use the same source material and the same nitrogen reaction material, and a nitrogen content in the first protective layer may be less than a nitrogen content in the second protective layer.
Claims12
A variable resistance memory device comprising:
- a first conductive line provided on a substrate;
- a second conductive line intersecting the first conductive line on the first conductive line;
- a memory cell comprising a variable resistance pattern and provided at an intersection point of the first conductive line and the second conductive line;
- and
- a protective layer sealing the memory cell on the substrate and comprising silicon nitride (SiNx),
- wherein a nitrogen content in the protective layer increases as a distance from an interface between the protective layer and the memory cell increases, and
- wherein the nitrogen content in the protective layer continuously changes as the distance from the interface between the protective layer and the memory cell.
Dependencies are inferred from the claim text.