Three-dimensional (3D) magnetic memory devices comprising a magnetic tunnel junction (MTJ) having a metallic buffer layer
AssigneeIntegrated Silicon Solution, (Cayman) Inc.
InventorsMarcin Gajek, Michail Tzoufras
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Abstract
A magnetic memory device comprises a cylindrical core and a plurality of layers surrounding the core. The plurality of layers include a metallic buffer layer, a ferromagnetic storage layer, a barrier layer, and a ferromagnetic reference layer. The cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction. A magnetization of the ferromagnetic layer storage parallels an interface between the metallic buffer layer and ferromagnetic storage layer.
Claims12
A magnetic memory device comprising:
- a cylindrical core;
- a plurality of layers surrounding the core, including:
- a metallic buffer layer;
- a ferromagnetic storage layer;
- a barrier layer;
- and
- a ferromagnetic reference layer;
- wherein:
- the metallic buffer layer is positioned between the barrier layer and the ferromagnetic storage layer;
- the cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction;
- and
- a magnetization of the ferromagnetic storage layer parallels an interface between the metallic buffer layer and ferromagnetic storage layer.
Dependencies are inferred from the claim text.