US 11,456,379 B1 · Split-gate trench MOSFET

Abstract

A split-gate trench device chip has an active region in which a plurality of active trenches are disposed. The active region is enclosed by termination trenches disposed in a termination region, which extends to the edges of the chip. A gate metal lead is disposed on the device surface. The gate metal lead makes contact to gate electrodes in the active trenches through contact holes disposed in the active region. A source or a drain metal lead is also disposed on the surface. The source or the drain metal lead makes contact to the field plate electrodes through contact holes disposed outside the active region. Each active trench in the active region has a first end merge into a first termination trench and a second end separated from an adjacent second termination trench.

Claims22

Dependent claims

A split-gate trench device chip, comprising:

a top chip surface;
a substrate;
an active region enclosed by a termination region;
termination trenches disposed in the termination region, extending from the top chip surface towards the substrate;
a plurality of first active trenches disposed within the active region;
each first active trench having a first end merged into a first termination trench and a second end not merged into a second termination trench;
a first conductive material disposed in each first active trenches and in each termination trench;
and
first contact holes disposed outside the active region through which the first conductive material electrically connects a first metal lead disposed over the top chip surface.

6 more elements

Dependencies are inferred from the claim text.

Split-gate trench MOSFET

Life of this patent

Split-gate trench MOSFET

Life of this patent

Abstract

Claims22