Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a substrate;
• a semiconductor layer disposed on one side of the substrate, the semiconductor layer comprising a channel layer and a barrier layer, and a two-dimensional electron gas being formed at an interface between the channel layer and the barrier layer;
• a source, a gate, and a drain disposed on one side of the semiconductor layer away from the substrate;
• and
• at least two drain junction terminals located on the side of the semiconductor layer away from the substrate and disposed at intervals between the gate and the drain, the at least two drain junction terminals being electrically connected to the drain respectively,
• wherein the at least two drain junction terminals are disposed along an extension direction from the gate to the drain, and a length of a drain junction terminal close to the drain in the at least two drain junction terminals in the extension direction is greater than that of a drain junction terminal close to the gate in the at least two drain junction terminals in the extension direction,
• wherein a thickness, in a direction perpendicular to the extension direction from the gate to the drain, of a drain junction terminal close to the drain in the at least two drain junction terminals is greater than that of a drain junction terminal away from the drain in the at least two drain junction terminals.