Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Ling Chan, Liang-Yin Chen, Wei-Ting Chien
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Abstract
In an embodiment, a device includes: a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate; a gate stack over a channel region of the fin; a source/drain region adjacent the gate stack; a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant; and a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant decreasing in a direction extending from a top of the fin to a bottom of the fin.
Claims20
A device comprising:
- a fin extending from a substrate;
- a gate stack over a channel region of the fin;
- a source/drain region adjacent the gate stack, the source/drain region disposed in a source/drain recess in the fin;
- a lightly doped source/drain (LDD) region in the fin, the LDD region horizontally disposed between the source/drain region and the channel region;
- and
- a first doped region in the fin, the first doped region vertically disposed between the LDD region and the substrate, the first doped region horizontally disposed between the source/drain region and the channel region, the first doped region having a uniform concentration of a dopant, the channel region being free from the dopant, wherein a depth of the source/drain recess is less than a depth of the first doped region.
A device comprising:
- a fin extending from a substrate;
- a gate stack over a channel region of the fin;
- a source/drain region adjacent the gate stack, the source/drain region disposed in a source/drain recess in the fin;
- a lightly doped source/drain (LDD) region in the fin, the LDD region horizontally disposed between the source/drain region and the channel region;
- and
- a first doped region in the fin, the first doped region vertically disposed between the source/drain region and the substrate, the first doped region having a graded concentration of a dopant decreasing in a direction extending from a top of the fin to a bottom of the fin, the channel region being free from the dopant, wherein a depth of the source/drain recess is less than a depth of the first doped region.
A device comprising:
- a fin on a substrate, fin having a Si portion proximate the substrate and a SiGe portion distal the substrate;
- a gate stack over a channel region of the fin;
- a source/drain region adjacent the gate stack;
- a first doped region in the SiGe portion of the fin, the first doped region disposed between the channel region and the source/drain region, the first doped region having a uniform concentration of a dopant;
- and
- a second doped region in the SiGe portion of the fin, the second doped region disposed under the source/drain region, the second doped region having a graded concentration of the dopant decreasing in a direction extending from a top of the fin to a bottom of the fin.
Dependencies are inferred from the claim text.