Semiconductor device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHo Kyun An, Su Min Cho
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Abstract
A semiconductor device includes a substrate including a first region and a second region, a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench, a first gate insulating film which extends on the first silicon-germanium film along a profile of the first gate trench and is in physical contact with the first silicon-germanium film, a first metallic gate electrode on the first gate insulating film, a source/drain region formed inside the substrate on both sides of the first metallic gate electrode, a second gate insulating film in the second region and a second metallic gate electrode on the second gate insulating film.
Claims20
A semiconductor device comprising:
- a substrate including a first region and a second region;
- a first silicon-germanium film which is conformally formed inside a surface of the substrate of the first region and defines a first gate trench;
- a first gate insulating film, which extends on the first silicon-germanium film along a profile of the first gate trench, and is in physical contact with the first silicon-germanium film;
- a first metallic gate electrode on the first gate insulating film;
- a source/drain region formed inside the substrate on both sides of the first metallic gate electrode;
- a second gate insulating film in the second region;
- and
- a second metallic gate electrode on the second gate insulating film.
A semiconductor device comprising:
- a silicon-germanium film, which is formed inside the substrate, and defines a gate trench;
- a gate insulating film extending along a profile of the gate trench on the silicon-germanium film;
- a gate electrode stack in the gate trench and on the gate insulating film;
- and
- a source/drain region formed inside the substrate on both sides of the gate electrode stack,
- wherein a germanium fraction of the silicon-germanium film decreases with increasing distance from the gate insulating film,
- wherein the silicon-germanium film extends along an upper surface of the substrate, and
- wherein a part of the source/drain region is in the silicon-germanium film.
A semiconductor device comprising:
- a substrate, which includes a cell region and a peri-region defined around the cell region;
- a bit line structure, which includes a cell conductive line and a cell line capping film on the cell conductive line, on the substrate in the cell region;
- a cell gate electrode, which is inside the substrate in the cell region and intersects the cell conductive line;
- a silicon-germanium film, which is conformally formed inside the substrate in the pen-region and defines a gate trench;
- a gate insulating film extending along a profile of the gate trench on the silicon-germanium film;
- and
- a gate electrode stack in the gate trench and on the gate insulating film,
- wherein the gate electrode stack includes a lower metallic gate electrode and an upper gate electrode on the lower metallic gate electrode, and
- wherein the upper gate electrode has a stack structure identical to the cell conductive line.
Dependencies are inferred from the claim text.