Structure and method to provide conductive field plate over gate structure

A conductive field plate, comprising:

• a silicide-blocking layer over and contacting a gate spacer of a transistor device, the silicide-blocking layer over an isolation region within a drain extension region of the transistor device, wherein the isolation region extends from beneath a gate structure of the transistor device to beneath the conductive field plate;
• a conductive layer over and contacting the silicide-blocking layer;
• a field plate contact on the conductive layer;
• and
• a conductive region over the conductive layer, wherein the field plate contact electrically couples the conductive region to the conductive layer, and wherein a source contact electrically couples the conductive region to a source region of the transistor device.

A method of forming an integrated circuit device, comprising:

• forming a transistor device, including:
• a gate structure;
• a drain extension region extending laterally from partially under the gate structure to a drain region;
• and
• a gate spacer located over the drain extension region;
• forming a silicide-blocking layer over and in contact with the gate spacer, the silicide-blocking layer having a first end over the gate structure and a second, opposing end over the drain extension region;
• forming a conductive field plate on and in contact with the silicide-blocking layer;
• forming an isolation region within the drain extension region, wherein the isolation region extends from beneath the gate structure to beneath the conductive field plate;
• and
• forming a field plate contact to the conductive field plate.