Epitaxial structure and semiconductor device
AssigneeGlobalWafers Co., Ltd.
InventorsJia-Zhe Liu, Tzu-Yao Lin, Ying-Ru Shih
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Abstract
An epitaxial structure and a semiconductor device are provided in which the epitaxial structure includes at least a SiC substrate, a nucleation layer, and a GaN layer. The nucleation layer is formed on the SiC substrate. The material of the nucleation layer is aluminum gallium nitride doped with a dopant, the Al content in the nucleation layer changes from high to low in the thickness direction, the lattice constant of the nucleation layer is between 3.08 Å and 3.21 Å, and the doping concentration of the nucleation layer changes from high to low in the thickness direction. The GaN layer is formed on the nucleation layer.
Claims13
An epitaxial structure, including:
- a silicon carbide (SiC) substrate;
- a nucleation layer formed on the substrate, wherein a material of the nucleation layer is aluminum gallium nitride (AlGaN) doped with a dopant, a lattice constant of the nucleation layer is between 3.08 Å and 3.21 Å, a content of Al in the nucleation layer changes from high to low in a thickness direction, and a doping concentration of the nucleation layer changes from high to low in the thickness direction, an initial value of the doping concentration is 5E18 cm−3 to 1E20 cm−3, and an end value of the doping concentration is 1E18 cm−3 to 5E19 cm−3;
- and
- a gallium nitride (GaN) layer formed on the nucleation layer.
Dependencies are inferred from the claim text.