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US 11,456,361 B1Granted
Ultrawide bandgap semiconductor devices including magnesium germanium oxides
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
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Abstract
Various forms of MgxGe1-xO2-x are disclosed, where the MgxGe1-xO2-x are epitaxial layers formed on a substrate comprising a substantially single crystal substrate material. The epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material. Semiconductor structures and devices comprising the epitaxial layer of MgxGe1-xO2-x are disclosed, along with methods of making the epitaxial layers and semiconductor structures and devices.
Claims14
A semiconductor device comprising:
- a substrate comprising a substantially single crystal substrate material;
- and
- an active region on the substrate, the active region comprising an epitaxial layer of MgxGe1-xO2-x, with x having a value of 0≤x<1;
- wherein the epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material;
- wherein the semiconductor device is an optoelectronic device comprising a light emitting diode or a photodetector, or the semiconductor device is an electronic device comprising a diode or a transistor.
2 more elements
A semiconductor structure comprising:
- a substrate comprising a substantially single crystal substrate material;
- and
- an epitaxial layer of MgxGe1-xO2-x on the substrate, with x having a value of 0≤x<1;
- wherein the epitaxial layer of MgxGe1-xO2-x has a crystal symmetry compatible with the substrate material, wherein the epitaxial layer of MgxGe1-xO2-x is an active region of the semiconductor structure;
- and
- wherein the semiconductor structure is an optoelectronic device or an electronic device.
3 more elements
Dependencies are inferred from the claim text.