Semiconductor device and method for fabricating the same
AssigneeSK hynix Inc.
InventorsJun Hyuk Seo, Myoung Sik Chang
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes: forming a mold structure including a mold layer and a supporter layer over a semiconductor substrate; forming an opening penetrating the mold structure; forming a protective layer on a bottom surface and a sidewall of the opening; forming a lower electrode over the protective layer; selectively etching the supporter layer to form a supporter that supports the lower electrode; removing the mold layer to define a non-exposed portion and an exposed portion of an outer wall of the protective layer; and selectively trimming the exposed portion of the protective layer to form a protective layer pattern between the supporter and the lower electrode.
Claims21
A method for fabricating a semiconductor device, the method comprising:
- forming a mold structure including a mold layer and a supporter layer over a semiconductor substrate;
- forming an opening penetrating the mold structure;
- forming a protective layer on a bottom surface and a sidewall of the opening;
- forming a lower electrode over the protective layer;
- selectively etching the supporter layer to form a supporter that supports the lower electrode;
- removing the mold layer to expose a portion of an outer wall of the protective layer;
- and
- selectively trimming the exposed portion of the protective layer to form a protective layer pattern between the supporter and the lower electrode.
Dependencies are inferred from the claim text.