Thin film structure including dielectric material layer and electronic device employing the same

An electronic device comprising:

• a base layer;
• and
• a thin film structure on the base layer, the thin film structure including
• a first material layer,
• a dielectric material layer having ferroelectricity on the first material layer, the dielectric material layer including a matrix material having a fluorite structure and a dopant, a ratio of a concentration mean to a concentration standard deviation of the dopant in a thickness direction of the dielectric material layer is 8 or greater, and a thickness uniformity of the dielectric material layer is 90% or greater, and
• a second material layer on the dielectric material layer.

A method of forming a thin film structure, the method comprising:

• depositing, through an atomic layer deposition including sequential injection cycles of a precursor and an oxidant, a dielectric material layer onto a first material layer;
• injecting a dopant, through an injection cycle of the dopant between a precursor injection cycle and an oxidant injection cycle of at least one of the sequential injection cycles, into the dielectric material layer;
• and
• depositing a second material layer onto the dielectric material layer,
• wherein a ratio of a concentration mean to a concentration standard deviation of the dopant in a thickness direction of the dielectric material layer is 8 or greater,
• a thickness uniformity of the dielectric material layer is 90% or greater, and
• wherein the dielectric material layer includes ferroelectric properties.