Imaging device including at least one unit pixel cell and voltage application circuit

An imaging device comprising:

• at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges, wherein
• the photoelectric converter includes:
• a first electrode;
• a second electrode configured to transmit the incident light;
• a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength;
• and
• a second photoelectric conversion layer disposed between the first electrode and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength, and
• the photoelectric converter has a characteristic such that,
• when a first voltage or a second voltage having a larger absolute value than the first voltage is selectively applied between the first electrode and the second electrode,
• an external quantum efficiency of the photoelectric converter at the second wavelength when the second voltage is applied between the first electrode and the second electrode is larger than an external quantum efficiency of the photoelectric converter at the second wavelength when the first voltage is applied between the first electrode and the second electrode, and
• a difference between the external quantum efficiency of the photoelectric converter at the second wavelength when the second voltage is applied and the external quantum efficiency of the photoelectric converter at the second wavelength when the first voltage is applied is larger than a difference between an external quantum efficiency of the photoelectric converter at the first wavelength when the second voltage is applied and an external quantum efficiency of the photoelectric converter at the first wavelength when the first voltage is applied.