Three-dimensional NAND memory device containing two terminal selector and methods of using and making thereof
AssigneeSanDisk Technologies LLC
InventorsYu-Chung Lien, Jiahui Yuan, Deepanshu Dutta, Christopher Petti
Life of this patent
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Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive word line layers located over a substrate, and a plurality of vertical memory strings. Each vertical memory string includes a series connection of a memory stack structure and a selector element. Each of the memory stack structures extends through the alternating stack and includes a respective memory film and a respective vertical semiconductor channel. Each of the selector elements includes a two terminal device that is configured to provide at least two different resistivity states.
Claims20
A three-dimensional memory device, comprising:
- an alternating stack of insulating layers and electrically conductive word line layers located over a substrate;
- and
- a plurality of vertical memory strings, wherein each vertical memory string comprises a series connection of a memory stack structure and a selector element;
- wherein:
- each of the memory stack structures extends through the alternating stack and includes a respective memory film and a respective vertical semiconductor channel;
- and
- each of the selector elements comprises a two terminal device that is configured to provide at least two different resistivity states and has a bottom surface that overlies a topmost layer of the alternating stack and overlies a horizontal plane including topmost surfaces of the vertical semiconductor channels.
A method of forming a three-dimensional memory device, comprising:
- forming an alternating stack of insulating layers and electrically conductive layers and a two-dimensional array of memory stack structures vertically extending therethrough over a substrate, wherein each of the memory stack structures includes a respective memory film and a respective vertical semiconductor channel;
- and
- forming a two-dimensional array of two terminal selector elements over the two-dimensional array of memory stack structures, wherein a two-dimensional array of series connections of a memory stack structure and a selector element is formed, wherein each of the selector elements is configured to provide at least two different resistivity states, and wherein each of the selector elements has a bottom surface that overlies a topmost layer of the alternating stack and overlies a horizontal plane including topmost surfaces of the vertical semiconductor channels.
Dependencies are inferred from the claim text.