Magnetic memory device

A magnetic memory device comprising:

• a first cell array structure comprising first group magnetic patterns extending in a first direction on a surface of a substrate and spaced apart from each other in a second direction intersecting the first direction, and a first transistor region comprising first transistors connected to the first group magnetic patterns;
• and
• a second cell array structure comprising second group magnetic patterns extending in the first direction between the first group magnetic patterns, and a second transistor region comprising second transistors connected to the second group magnetic patterns,
• wherein the first transistors are arranged in the second direction, the second transistors are arranged in the second direction, and the second transistor region is spaced apart from the first transistor region in the first direction.

A magnetic memory device comprising:

• first group magnetic patterns extending in a first direction on a surface of a substrate and spaced apart from each other in a second direction intersecting the first direction;
• second group magnetic patterns between the first group magnetic patterns;
• a first transistor region comprising first transistors connected to first end regions of the first group magnetic patterns and arranged in the second direction;
• a second transistor region comprising second transistors connected to second end regions of the second group magnetic patterns and arranged in the second direction;
• a first center transistor region comprising first center transistors connected to respective first center regions of the first group magnetic patterns;
• and
• a second center transistor region comprising second center transistors connected to respective second center regions of the second group magnetic patterns,
• wherein the second transistor region is spaced apart from the first transistor region in the first direction, and
• wherein each of the first and second transistor regions and each of the first and second center transistor regions comprises a pair of gate electrodes extending in the first direction and a first dopant region between the pair of gate electrodes.