Magnetoresistive random access memory and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsJia-Rong Wu, I-Fan Chang, Rai-Min Huang, Ya-Huei Tsai, Yu-Ping Wang
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Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, forming a magnetic tunneling junction (MTJ) on the MRAM region, forming a metal interconnection on the MTJ, forming a dielectric layer on the metal interconnection, patterning the dielectric layer to form openings, and forming the blocking layer on the patterned dielectric layer and the metal interconnection and into the openings.
Claims20
A method for fabricating a semiconductor device, comprising:
- providing a substrate having a logic region and a magnetoresistive random access memory (MRAM) region;
- forming a magnetic tunneling junction (MTJ) on the MRAM region;
- forming a metal interconnection on the MTJ;
- forming a stop layer on the metal interconnection;
- and
- forming a blocking layer on the stop layer.
A semiconductor device, comprising:
- a substrate having a logic region and a magnetoresistive random access memory (MRAM) region;
- a MTJ on the MRAM region;
- a metal interconnection on the MTJ;
- a stop layer on the metal interconnection;
- and
- a blocking layer on the stop layer.
Dependencies are inferred from the claim text.