Three-dimensional semiconductor memory device, operating method of the same and electronic system including the same

An electronic system comprising:

• a three-dimensional semiconductor memory device including a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately stacked on the substrate, vertical channel structures, which are provided in channel holes penetrating the stack structure and extend in a direction perpendicular to an upper surface of the substrate, and an input/output pad electrically connected to one of the vertical channel structures;
• and
• a controller electrically connected to the three-dimensional semiconductor memory device via the input/output pad and configured to control the three-dimensional semiconductor memory device,
• wherein each of the vertical channel structures includes:
• a data storage pattern conformally covering an inner sidewall of the channel holes and having a single-layer structure including a ferroelectric material;
• a vertical channel pattern covering a sidewall of the data storage pattern and including an oxide semiconductor material;
• a conductive pad on an upper surface of the vertical channel pattern;
• and
• a vertical semiconductor pattern surrounded by the vertical channel pattern and the conductive pad,
• wherein the vertical channel pattern includes a first portion contacting the upper surface of the substrate and a second portion provided between the data storage pattern and the vertical semiconductor pattern,
• wherein the vertical semiconductor pattern is spaced apart from the substrate with the first portion of the vertical channel pattern therebetween, and
• wherein the vertical semiconductor pattern includes semiconductor material doped with an impurity of a first conductivity type.