Nonvolatile memory device having a ferroelectric layer

A nonvolatile memory device comprising:

• a substrate having an upper surface;
• a gate structure disposed over the substrate, the gate structure comprising at least one gate electrode layer pattern and at least one gate insulation layer pattern, which are alternately stacked along a first direction perpendicular to the upper surface, wherein the gate structure extends in a second direction perpendicular to the first direction;
• a ferroelectric layer disposed on at least a portion of one sidewall surface of the gate structure, wherein the one sidewall surface of the gate structure forms a plane substantially parallel to the first and second directions;
• a source electrode structure and a drain electrode structure spaced apart from each other in the second direction, each disposed over the substrate and each disposed on the ferroelectric layer;
• a channel structure disposed over the substrate and disposed between the source electrode structure and the drain electrode structure, and
• a conductive channel formed in some portions of the channel structure,
• wherein the conductive channel extends in the second direction to electrically connect the source electrode structure and the drain electrode structure over the substrate.