Semiconductor device including transparent conductive oxide layer

A semiconductor device comprising:

• a peripheral circuit structure including a peripheral circuit device and a contact plug;
• a lower conductive layer on the peripheral circuit structure;
• a stack structure on the lower conductive layer, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked;
• and
• a plurality of channel structures extending through the stack structure, each channel structure including an information storage layer, a channel layer inside the information storage layer, the channel layer being connected to the lower conductive layer, and a buried dielectric layer inside the channel layer,
• wherein each of the transparent conductive oxide layers is an n-type electrode.

A semiconductor device comprising:

• a peripheral circuit structure including a peripheral circuit device and a contact plug;
• a lower conductive layer on the peripheral circuit structure;
• a stack structure on the lower conductive layer, the stack structure including a plurality of dielectric layers and a plurality of transparent conductive oxide layers, the dielectric layers and the transparent conductive oxide layers are alternately stacked;
• a plurality of channel structures extending through the stack structure, each channel structure including an information storage layer, a channel layer inside the information storage layer, the channel layer being connected to the lower conductive layer, and a buried dielectric layer inside the channel layer;
• a plurality of conductive pads in the stack structure and on respective channel structures;
• a selection line separation layer extending into the stack structure separating at least one of the transparent conductive oxide layers;
• a buried layer adjacent to the channel structures, the buried layer extending through the stack structure;
• and
• a bit line on the stack structure, the bit line being electrically connected to the conductive pads, wherein
• when viewed in a longitudinal sectional view, horizontal widths of each of the dielectric layers and a corresponding one of the transparent conductive oxide layers that are stacked adjacent to each other in a vertical direction are substantially equal to each other,
• in each of the dielectric layers and the corresponding one of the transparent conductive oxide layers that are stacked adjacent to each other in the vertical direction, a central portion and an edge of the dielectric layer abut the transparent conductive oxide layer, and
• a horizontal distance between dielectric layers that are adjacent to each other in a horizontal direction, among the dielectric layers, is substantially equal to a horizontal distance between transparent conductive oxide layers that are adjacent to each other in the horizontal direction, among the transparent conductive oxide layers, and
• wherein each of the transparent conductive oxide layers is an n-type electrode.