Method of manufacturing semiconductor device
AssigneeSK hynix Inc.
InventorMin Young Heo
Life of this patent
Estimating the term…
Abstract
The present technology provides a method of manufacturing a semiconductor device. The method includes forming a preliminary source structure, forming a stack structure on the preliminary source structure, the stack structure including a first material layer and a second material layer, forming a preliminary memory layer that penetrates the stack structure, forming a trench passing through the stack structure, forming a first buffer pattern by performing a surface treatment on a portion of the second material layer that is exposed by the trench, and forming a protective layer covering the first buffer pattern.
Claims19
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary source structure including a first source layer;
- forming a stack structure on the preliminary source structure, the stack structure including a first material layer and a second material layer;
- forming a preliminary memory layer that penetrates the stack structure;
- forming a trench that penetrates the stack structure;
- forming a first buffer pattern by performing a surface treatment on a portion of the second material layer that is exposed by the trench, wherein a portion of the second material layer remains between the first buffer pattern and the preliminary memory layer;
- and
- forming a protective layer covering the first buffer pattern.
A method of manufacturing a semiconductor device, the method comprising:
- forming a preliminary source structure;
- forming a stack structure on the preliminary source structure, the stack structure including first material layers and second material layers;
- forming a preliminary memory layer that penetrates the stack structure;
- forming a trench that penetrates the stack structure;
- forming buffer patterns overlapping the first material layers;
- and
- forming a protective layer that covers the buffer patterns,
- wherein the protective layer includes an interposed portion between the buffer patterns.
A method of manufacturing a semiconductor device, the method comprising:
- forming a source sacrificial layer;
- forming a stack structure in which first material layers and second material layers are alternately stacked;
- forming a channel structure that penetrates the stack structure;
- forming a trench that penetrates the stack structure;
- forming buffer patterns by performing a surface treatment on sidewalls of the first material layers that are exposed by the trench;
- forming a protective layer that covers the buffer patterns in the trench;
- forming a cavity by selectively removing the source sacrificial layer;
- forming a source layer that is connected to the channel structure in the cavity;
- and
- removing the second material layers through the trench.
Dependencies are inferred from the claim text.