Semiconductor memory device and manufacturing method thereof
AssigneeKioxia Corporation
InventorYusuke Shima
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Abstract
A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality of first films different from the first conductive layers disposed in same layers as the plurality of first conductive layers in the second region and a plurality of second films different from the second conductive layers and the first films disposed in same layers as the plurality of second conductive layers in the second region.
Claims18
A semiconductor memory device comprising:
- a substrate;
- a plurality of conductive layers that are disposed in a first direction intersecting with a surface of the substrate and extend in a second direction intersecting with the first direction;
- a plurality of insulating layers each disposed between the plurality of conductive layers;
- a semiconductor layer that extends in the first direction and is opposed to the plurality of conductive layers and the plurality of insulating layers;
- and
- a gate insulating layer disposed between the plurality of conductive layers and the semiconductor layer,
- a first region where the plurality of conductive layers, the plurality of insulating layers, the semiconductor layer, and the gate insulating layer are formed and a second region different from the first region being provided above the substrate, wherein
- the plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers,
- a plurality of first films different from the first conductive layers are disposed in the second region in same layers as the plurality of first conductive layers in the first region, and
- a plurality of second films different from the second conductive layers and the first films are disposed in the second region in same layers as the plurality of second conductive layers in the first region.
A semiconductor memory device comprising:
- a substrate;
- a plurality of conductive layers that are disposed in a first direction intersecting with a surface of the substrate and extend in a second direction intersecting with the first direction;
- a plurality of insulating layers each disposed between the plurality of conductive layers;
- a semiconductor layer that extends in the first direction and is opposed to the plurality of conductive layers and the plurality of insulating layers;
- and
- a gate insulating layer disposed between the plurality of conductive layers and the semiconductor layer,
- a first region being provided above the substrate, where the plurality of conductive layers, the plurality of insulating layers, the semiconductor layer, and the gate insulating layer are formed,
- a second region different from the first region being provided above the substrate, and
- a third region between the first region and the second region being provided above the substrate, wherein
- the plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers,
- a plurality of first films different from the first conductive layers are disposed in the second region in same layers as the plurality of first conductive layers in the first region,
- a plurality of second films different from the second conductive layers are disposed in the second region in same layers as the plurality of second conductive layers in the first region,
- the plurality of first conductive layers are disposed across the first region and the third region, and
- the plurality of second films are disposed across the second region and the third region.
Dependencies are inferred from the claim text.