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US 11,456,306 B2Granted
Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemes
AssigneeGLOBALFOUNDRIES Singapore Ptd. Ltd.
InventorsBong Woong Mun, Jeoung Mo Koo
Life of this patent
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Abstract
A nonvolatile memory device is provided. The nonvolatile memory device comprises a floating gate arranged over a first active region, whereby the first active region is in an active layer of a substrate. A metal-insulator-metal (MIM) capacitor may be provided laterally adjacent to the floating gate, whereby a portion of the metal-insulator-metal capacitor is in the active layer. A contact pillar may connect a first electrode of the metal-insulator-metal capacitor to the floating gate.
Claims16
A nonvolatile memory device comprising:
- a floating gate over a first active region, wherein the first active region is in an active layer of a substrate;
- a metal-insulator-metal (MIM) capacitor laterally adjacent to the floating gate, wherein a portion of the metal-insulator-metal capacitor is in the active layer;
- and
- a contact pillar connecting a first electrode of the metal-insulator-metal capacitor to the floating gate.
1 more element
An array of nonvolatile memory devices comprising:
- a first active region and a second active region in an active layer of a substrate;
- a first isolation region and a second isolation region adjacent to the first isolation region between the first active region and the second active region;
- a first array of floating gates over the first active region and a second array of floating gates over the second active region;
- a metal-insulator-metal capacitor laterally adjacent to the floating gates, wherein a lower portion of the metal-insulator-metal capacitor is in the first isolation region in the active layer and a first dielectric layer in the substrate;
- and
- a contact pillar connecting a first electrode of the metal-insulator-metal capacitor to each floating gate.
3 more elements
Dependencies are inferred from the claim text.