US 11,456,301 B2 · Dram and method of making

Abstract

Embodiments of the present disclosure generally relate to a storage device. More specifically, embodiments described herein generally relate to a dynamic random-access memory and the method of making thereof. In one embodiment, a cell array includes at least an active region and a field region adjacent to the active region. The active region includes at least one trench, a dielectric layer disposed in the trench, a first conformal layer disposed on the dielectric layer, and a conductive material disposed on the first conformal layer. The field region includes a trench, a dielectric layer disposed in the trench, a second conformal layer disposed on the dielectric layer, and a conductive material disposed on the second conformal layer. The second conformal layer has a different composition than the first conformal layer.

Claims20

Dependent claims

A method for forming a cell array, comprising:

depositing a dielectric layer in one or more first trenches located in an active region and in one or more second trenches disposed in one or more shallow trench isolations located in a field region;
depositing a first conformal layer on the dielectric layer, the first conformal layer comprising a first material;
depositing a mask on the one or more first trenches located in the active region;
removing the first conformal layer disposed in the one or more second trenches;
depositing a second conformal layer on the dielectric layer in the one or more second trenches, the second conformal layer comprising the first material doped with one or more dopants;
removing the mask;
and
depositing a conductive material on the first conformal layer in the one or more first trenches and on the second conformal layer in the one or more second trenches.

5 more elements

Dependencies are inferred from the claim text.

Dram and method of making

Life of this patent

Dram and method of making

Life of this patent

Abstract

Claims20