Integrated assemblies having voids along regions of gates, and methods of forming conductive structures
AssigneeMicron Technology, Inc.
InventorSanh D. Tang
Life of this patent
Estimating the term…
Abstract
Some embodiments include an integrated assembly with a semiconductor-material-structure having a first source/drain region, a second source/drain region, and a channel region between the first and second source/drain regions. The semiconductor-material-structure has a first side and an opposing second side. A first conductive structure is adjacent to the first side and is operatively proximate the channel region to gatedly control coupling of the first and second source/drain regions through the channel region. A second conductive structure is adjacent to the second side and is spaced from the second side by an intervening region which includes a void. Some embodiments include methods of forming integrated assemblies.
Claims20
A method of forming an integrated assembly, comprising:
- forming linear features over a base;
- the linear features including digit lines and semiconductor-material-linear-configurations over the digit lines;
- the linear features extending along a first direction;
- forming trenches to extend into the linear features;
- the trenches extending along a second direction which crosses the first direction;
- the trenches extending into the semiconductor-material-linear-configurations but not breaking the digit lines;
- the trenches patterning semiconductor-material-structures from the semiconductor-material-linear-configurations;
- the semiconductor-material-structures including semiconductor-material-pillars;
- the semiconductor-material-structures including upper source/drain regions at upper regions of the semiconductor-material-pillars, channel regions within the semiconductor-material-pillars and under the upper source/drain regions, and lower source/drain regions under the channel regions and coupled with the digit lines;
- forming first-material-liners within the trenches;
- forming second-material-liners over the first-material-liners;
- recessing the second-material-liners along first sides of the trenches while not recessing the second-material-liners along opposing second sides of the trenches;
- forming gate lines within the trenches and over the recessed second-material-liners;
- after forming the gate lines, recessing the second-material-liners along the second sides of the trenches to form voids;
- and
- capping the voids.
A method of forming integrated assembly, comprising:
- forming a semiconductor-material-structure having a first source/drain region, a second source/drain region, and a channel region between the first and second source/drain regions;
- the semiconductor-material-structure having a first side and an opposing second side;
- forming a first conductive structure adjacent the first side and operatively proximate the channel region to gatedly control coupling of the first and second source/drain regions through the channel region;
- and
- forming a second conductive structure adjacent the second side and spaced from the second side by an intervening region which includes a void.
Dependencies are inferred from the claim text.