Semiconductor device with carbon liner over gate structure and method for forming the same
AssigneeNanya Technology Corporation
InventorChun-Heng Wu
Life of this patent
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Abstract
The present disclosure provides a semiconductor device with a carbon liner over a gate structure and a method for forming the semiconductor device. The semiconductor device includes a gate structure disposed over a semiconductor substrate. The semiconductor device also includes a carbon liner covering a top surface and sidewalls of the gate structure and a top surface of the semiconductor substrate. The semiconductor device further includes a bit line contact disposed over the semiconductor substrate. The bit line contact extends over the gate structure, and the bit line contact is electrically separated from the gate structure by the carbon liner.
Claims11
A semiconductor device, comprising:
- a gate structure disposed over a semiconductor substrate;
- a carbon liner covering a top surface and sidewalls of the gate structure and a top surface of the semiconductor substrate;
- a bit line contact disposed over the semiconductor substrate, wherein the bit line contact extends over the gate structure, and the bit line contact is electrically separated from the gate structure by the carbon liner, and
- a bit line disposed over the bit line contact, wherein the bit line is separated from the carbon from the bit line contact, and the bit line contact is made of a low resistivity conductive material different from a material of the bit line.
A semiconductor device, comprising:
- a first gate structure and a second gate structure disposed over a semiconductor substrate;
- a bit line contact disposed over the semiconductor substrate and between the first gate structure and the second gate structure;
- a carbon liner covering the first gate structure and the second gate structure, wherein the bit line contact is electrically separated from the first gate structure and the second gate structure by the carbon liner;
- a dielectric layer disposed over the carbon liner, wherein the bit line contact penetrates through the dielectric layer;
- and
- a bit line disposed over the bit line contact, wherein the bit line is separated from the carbon from the bit line contact, and the bit line contact is made of a low resistivity conductive material different from a material of the bit line.
Dependencies are inferred from the claim text.