Semiconductor device and manufacturing method thereof
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorsQiyue Zhao, Chuan He, Zuer Chen
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Abstract
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, the doped substrate and the doped semiconductor structure have different polarities, and the doped substrate includes a doped silicon substrate.
Claims20
A GaN-based semiconductor device, comprising:
- a doped silicon substrate;
- a barrier layer, disposed over the doped silicon substrate;
- a channel layer, disposed between the doped silicon substrate and the barrier layer;
- a doped semiconductor structure, disposed in the doped silicon substrate, wherein
- a band gap of the barrier layer is greater than a band gap of the channel layer;
- the doped silicon substrate and the doped semiconductor structure have different polarities;
- an aperture formed in the barrier layer and channel layer and extending to the doped semiconductor structure disposed in the doped silicon substrate;
- an insulation layer disposed on the barrier layer and extending into the aperture formed in the barrier layer and covering the barrier layer and the channel layer in the aperture;
- a source, gate, and drain positioned on the barrier layer, the source and drain extending through the insulation layer and the insulation layer covering the gate contact such that the source and drain are insulated from the gate;
- a conductor formed in the aperture, the conductor extending from the barrier layer to the doped semiconductor structure disposed in the doped silicon substrate.
A GaN-based semiconductor device, comprising:
- a substrate;
- a high-electron-mobility transistor (HEMT), disposed on the substrate;
- a diode, disposed in the substrate;
- and a conductor layer, disposed below the substrate, wherein a source of the HEMT is electrically connected to an anode of the diode through the conductor layer, and a gate of the HEMT is electrically connected to a cathode of the diode;
- an aperture formed in the HEMT and extending through the HEMT to the diode;
- an insulation layer disposed on the HEMT and extending into the aperture formed in the HEMT to the diode, the insulation layer covering the gate such that the source is insulated from the gat;
- a conductor formed in the first aperture, the conductor extending from a top surface of the HEMT to the diode disposed in the substrate.
Dependencies are inferred from the claim text.