Semiconductor device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., Tsmc Nanjing Company, Limited, Tsmc China Company Limited
InventorsXin-Yong Wang, Yang Zhou, Liu Han
Life of this patent
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Abstract
A semiconductor device includes a substrate, a first gate structure, a second gate structure, a third gate structure, and a first source/drain region. The first, second, and third gate structures are above the substrate and arranged in a first direction. The first, second, and third gate structures extend in a second direction different from the first direction, and the second gate structure is between the first and third gate structures. The first source/drain region is between the first and third gate structures, and the first source/drain region is at one end of the second gate structure.
Claims20
A semiconductor device comprising:
- a substrate;
- a first gate structure, a second gate structure, and a third gate structure above the substrate and arranged in a first direction, wherein the first, second, and third gate structures extend in a second direction different from the first direction, and the second gate structure is between the first and third gate structures;
- and
- a first source/drain region extending from the first gate structure to the third gate structure, wherein the first source/drain region is at a first end of the second gate structure, and the first source/drain region is spaced apart from the second gate structure in a top view.
A semiconductor device comprising:
- a first semiconductor fin and a second semiconductor fin arranged in a first direction;
- a first gate structure crossing over the first and second semiconductor fins and extending from a first end of the first gate structure to a second end of the first gate structure in the first direction;
- a second gate structure crossing over the second semiconductor fin, spaced apart from the first semiconductor fin, and extending from a third end of the second gate structure to a fourth end of the second gate structure in the first direction, and the first end of the first gate structure is misaligned with the third end of the second gate structure;
- and
- a first epitaxial structure and a second epitaxial structure above the first semiconductor fin and on opposite sides of the first gate structure, wherein the first and second epitaxial structures have different lengths.
A method for manufacturing a semiconductor device, comprising:
- forming an active region above a substrate;
- forming a first gate structure, a second gate structure, a third gate structure above the substrate and crossing over the active region, wherein the first, second and third gate structures have a substantially constant pitch;
- removing a portion of the second gate structure directly between the first and third gate structures to expose a portion of the active region;
- and
- after removing the portion of the second gate structure, forming a first epitaxial structure at least on the portion of the active region exposed by the second gate structure.
Dependencies are inferred from the claim text.