Semiconductor package and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Chih Chen, Hung-Jui Kuo, Yu-Hsiang Hu, Sih-Hao Liao, Hung-Chun Cho
Life of this patent
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Abstract
A semiconductor package includes a first die, a second die, a molding compound and a redistribution structure. The first die has a first conductive pillar and a first complex compound sheath surrounding and covering a sidewall of the first conductive pillar. The second die has a second conductive pillar and a protection layer laterally surrounding the second conductive pillar. The molding compound laterally surrounds and wraps around the first and second dies, and is in contact with the first complex compound sheath of the first die. The redistribution structure is disposed on the first and second dies and the molding compound.
Claims20
A semiconductor package, comprising:
- a semiconductor die having a conductive pillar and a complex compound sheath, wherein the complex compound sheath is disposed on and surrounds a sidewall of the conductive pillar;
- a molding compound, laterally wrapping the semiconductor die, wherein the molding compound is in contact with the complex compound sheath of the semiconductor die and laterally surrounds the complex compound sheath and the conductive pillar;
- and
- a redistribution structure, disposed on the semiconductor die and electrically connected with the semiconductor die.
A semiconductor package, comprising:
- a first die, having a first conductive pillar and a first complex compound sheath surrounding the first conductive pillar;
- a second die, having a second conductive pillar, a protection layer laterally surrounding the second conductive pillar and a second complex compound sheath between the second conductive pillar and the protection layer;
- a molding compound, laterally surrounding and wrapping the first die and the second die, wherein the first complex compound sheath is sandwiched between the first conductive pillar and the molding compound;
- and
- a redistribution structure, disposed on the first die, the second die and the molding compound,
- wherein the redistribution structure includes a top via portion located farther away from the first and second dies and the molding compound and a bottom via portion closer to the first and second dies and the molding compound, and a ratio of a top width of the top via portion to a bottom width of the top via portion is larger than a ratio of a top width of the bottom via portion to a bottom width of the bottom via portion.
A method of forming a semiconductor package, comprising:
- providing a first die having a first conductive pillar;
- forming a first complex compound layer covering a top surface and a sidewall of the first conductive pillar;
- providing a second die having a second conductive pillar and a protection layer covering and surrounding the second conductive pillar;
- forming a molding compound wrapping around the first die and the second die and encapsulating the first complex compound layer on the first conductive pillar;
- and
- planarizing the molding compound to remove a portion of the first complex compound layer to form a first complex compound sheath exposing the top surface of the first conductive pillar and to remove a portion of the protection layer to expose the second conductive pillar;
- and
- forming a redistribution structure on the polarized molding compound and on the exposed first and second conductive pillars.
Dependencies are inferred from the claim text.