Integrated electronic element module, semiconductor package, and method for fabricating the same

A semiconductor package, comprising:

• an integrated electronic element module, comprising:
• at least two electronic elements, each of the at least two electronic elements having first electrical connectors;
• and
• a first molding compound encapsulating the at least two electronic elements, the first molding compound comprising a first planar surface and an opposing second planar surface, each of the at least two electronic components mounted adjacent the first planar surface and each of the first electrical connectors exposed at the first planar surface;
• a semiconductor device comprising second electrical connectors;
• a second molding compound encapsulating the integrated electronic element module and the semiconductor device, the second molding compound comprising a third planar surface and an opposing fourth planar surface, the third planar surface being closer to the first planar surface than the second planar surface;
• and
• a redistribution layer formed over the third planar surface;
• wherein each of the first electrical connectors is directly exposed on the first planar surface, and is electrically connected to the redistribution layer, and
• wherein each of the second electrical connectors of the semiconductor device extends to the third planar surface, and is electrically connected to the redistribution layer.

A semiconductor package, comprising:

• an integrated electronic element module, comprising:
• at least two electronic elements, each of the at least two electronic elements having first electrical connectors;
• and
• a first molding compound encapsulating the at least two electronic elements, the first molding compound comprising a first planar surface and an opposing second planar surface;
• a semiconductor device comprising second electrical connectors;
• a second molding compound encapsulating the integrated electronic element module and the semiconductor device, the second molding compound comprising a third planar surface and an opposing fourth planar surface, the third planar surface being closer to the first planar surface than the second planar surface;
• and
• a redistribution layer formed over the third planar surface;
• wherein each of the first electrical connectors is directly exposed on the first planar surface, and is electrically connected to the redistribution layer, and
• wherein each of the second electrical connectors of the semiconductor device extends to the third planar surface, and is electrically connected to the redistribution layer, and
• wherein the integrated electronic element module and the semiconductor device are disposed over the redistribution layer in a side-by-side manner, and
• wherein a thickness of the integrated electronic element module and the second molding compound of the semiconductor package have the same thickness.