A semiconductor device comprising at least one semiconductor chip and a lead frame or a substrate, in which an electrode of the semiconductor chip and an electrode of the lead frame, the electrode of the semiconductor chip and an electrode of the substrate, or electrodes of multiple semiconductor chips are connected by a noble metal-coated silver wire for ball bonding,
- wherein the noble metal-coated silver wire for ball bonding comprises a noble metal coating layer on a core material made of pure silver or a silver alloy, and contains at least one sulfur group element,
- the noble metal coating layer comprises a palladium intermediate layer and a gold skin layer, and contains at least one sulfur group element,
- a content of the palladium relative to an entire wire is between 0.01 mass % or more and 5.0 mass % or less,
- a content of the gold relative to the entire wire is between 1.0 mass % or more and 6.0 mass % or less, and
- a content of the sulfur group element relative to the entire wire is between 0.1 mass ppm or more and 100 mass ppm or less.