Bump structure and method of manufacturing bump structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Yu Chang, Ming-Da Cheng, Ming-Hui Weng
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a bump structure includes forming a passivation layer over a substrate. A metal pad structure is formed over the substrate, wherein the passivation layer surrounds the metal pad structure. A polyimide layer including a polyimide is formed over the passivation layer and the metal pad structure. A metal bump is formed over the metal pad structure and the polyimide layer. The polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring.
Claims20
A method of manufacturing a bump structure, comprising:
- forming a passivation layer over a substrate;
- forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;
- forming a polyimide layer comprising a polyimide over the passivation layer and the metal pad structure;
- and
- forming a metal bump over the metal pad structure and the polyimide layer, wherein the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring,
- wherein the forming the passivation layer comprises:
- forming a first passivation layer over the substrate;
- and
- forming a second passivation layer over the first passivation layer,
- wherein the first passivation layer and the second passivation layer are made of different materials.
A method of manufacturing a bump structure, comprising:
- forming a passivation layer over a substrate;
- forming a metal pad structure over the substrate, wherein the passivation layer surrounds the metal pad structure;
- forming a polyimide layer comprising a polyimide over the passivation layer and the metal pad structure;
- and
- forming a metal bump over the metal pad structure and the polyimide layer,
- wherein the metal bump is in electrical contact with the metal pad structure, and
- the polyimide layer is adhered to the passivation layer and the metal pad structure by an adhesion promotor, wherein the adhesion promotor is chemically bonded to the polyimide, the passivation layer, and the metal pad structure;
- and
- wherein the forming the polyimide layer comprises:
- combining a polyamic acid, an adhesion promotor, and a first solvent to form a polyamic acid composition;
- applying the polyamic acid composition to the passivation layer and metal pad structure;
- and
- heating the polyamic acid composition to a temperature ranging from 150° C. to 350° C. to convert the polyamic acid to the polyimide.
A bump structure, comprising:
- a passivation layer surrounding a metal pad;
- a polyimide layer including a polyimide disposed over the passivation layer and the metal pad;
- and
- a metal bump disposed over the metal pad and the polyimide layer,
- wherein the metal bump is in electrical contact with the metal pad, and
- the polyimide is a reaction product of a dianhydride and a diamine, wherein at least one of the dianhydride and the diamine comprises one selected from the group consisting of a cycloalkane, a fused ring, a bicycloalkane, a tricycloalkane, a bicycloalkene, a tricycloalkene, a spiroalkane, and a heterocyclic ring,
- wherein at least one of the dianhydride or the diamine comprises two or more cyclic groups, and
- the two or more cyclic groups are linked to each other by a linking group selected from the group consisting of —CH═CH—, —C≡C—, —O—, —C(O)O—, —CF3CH2CF3—, —CH3CH2CH3—, —SH—, and —SO2—.
Dependencies are inferred from the claim text.