Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• step (a) providing a semiconductor wafer including:
• a semiconductor substrate;
• a non-volatile memory formed in the semiconductor substrate;
• a bonding pad formed on the semiconductor substrate, and electrically connected with the non-volatile memory, and comprised of aluminum;
• and
• an insulating film formed on the semiconductor substrate, and comprised of an organic material,
• wherein a surface of the bonding pad has:
• a first region exposed in a first opening portion of the insulating film;
• and
• a second region exposed in a second opening portion of the insulating film, which is different from the first opening portion,
• wherein after arranging the organic material on the semiconductor substrate, the insulating film is formed by performing a first heat treatment to the organic material,
• wherein a temperature of the first heat treatment is 300° C. to 400° C., and
• wherein a time of the first heat treatment is 30 minutes to 2 hours;
• step (b) after the step (a), writing a data to the non-volatile memory by contacting a probe needle to the surface of the bonding pad located in the second region;
• step (c) after the step (b), performing a second heat treatment to the semiconductor wafer, and checking the non-volatile memory to which the data is written in the step (b),
• wherein a temperature of the second heat treatment is 200° C. to 280° C., and
• wherein a time of the second heat treatment is 6 hours to 50 hours;
• step (d) after the step (c), forming a conductive film comprised of nickel on the surface of the bonding pad located in the first region by using an electroplating method;
• step (e) after the step (d), forming a first solder material comprised of tin on the conductive film by using the electroplating method;
• step (f) after the step (e), forming a bump electrode on the surface of the bonding pad located in the first region via the conductive film by performing a third heat treatment to the first solder material,
• wherein a temperature of the third heat treatment is 100° C. to 270° C., and
• wherein a time of the third heat treatment is several tens of seconds to 5 minutes;
• and
• step (g) after the step (f), obtaining a semiconductor chip having the bump electrode, the conductive film, the bonding pad and the non-volatile memory by cutting the semiconductor wafer.